A new security architecture for SIP based P2P computer networks

Many applications are transferred from C/S (Client/Server) mode to P2P (Peer-to-Peer) mode such as VoIP (Voice over IP). This paper presents a new security architecture, i.e. a trustworthy authentication algorithm of peers, for Session Initialize Protocol (SIP) based P2P computer networks. A mechanism for node authentication using a cryptographic primitive called one-way accumulator is proposed to secure the P2P SIP computer networks. It leverages the distributed nature of P2P to allow for distributed resource discovery and rendezvous in a SIP network, thus eliminating (or at least reducing) the need for centralized servers. The distributed node authentication algorithm is established for the P2P SIP computer networks. The corresponding protocol has been implemented in our P2P SIP experiment platform successfully. The performance study has verified the proposed distributed node authentication algorithm for SIP based P2P computer networks

Deformation Behavior of Foam Laser Targets Fabricated by Two-Photon Polymerization

Two-photon polymerization (2PP), which is a three-dimensional micro/nano-scale additive manufacturing process, is used to fabricate component for small custom experimental packages (“targets”) to support laser-driven, high-energy-density physics research. Of particular interest is the use of 2PP to deterministically print millimeter-scale, low-density, and low atomic number (CHO) polymer matrices (“foams”). Deformation during development and drying of the foam structures remains a challenge when using certain commercial acrylic photo-resins. Acrylic resins were chosen in order to meet the low atomic number requirement for the foam; that requirement precludes the use of low-shrinkage organic/inorganic hybrid resins. Here, we compare the use of acrylic resins IP-S and IP-Dip. Infrared and Raman spectroscopy are used to quantify the extent of the polymerization during 2PP vs. UV curing. The mechanical strength of beam and foam structures is examined, particularly the degree of deformation that occurs during the development and drying processes. The magnitude of the shrinkage is quantified, and finite element analysis is used in order to simulate the resulting deformation. Capillary drying forces during development are shown to be small and are likely below the elastic limit of the foam log-pile structures. In contrast, the substantial shrinkage in IP-Dip (~5–10%) causes large shear stresses and associated plastic deformation, particularly near constrained boundaries and locations with sharp density transitions. Use of IP-S with an improved writing procedure results in a marked reduction in deformation with a minor loss of resolution

Verifying the Implementation of An Anisotropic Grain Boundary Energy Model in Idaho National Lab’s MARMOT

This work aims to verify the correct implementation of an anisotropic grain boundary (GB) energy model for face-centered cubic (FCC) and fluorite materials in Idaho National Laboratory’s phase field fuel performance code MARMOT. The model was recently implemented in MARMOT with the purpose of enabling higher fidelity simulations of UO2 nuclear fuels. As part of verification, tests were performed to measure the energy dependence on misorientation of high symmetry GBs in an FCC metal (Cu). The energies of the [100], [110], and [111] twist boundaries result as predicted, as do the energies of the [111] symmetric tilt boundaries. However, the energies of the [100] and [110] symmetric tilt boundaries display an unexpected mirror symmetry about half the rotation period. Further investigations are required to determine the cause of this discrepancy. Possible reasons include an error in the MARMOT implementation of the anisotropic GB energy model

Reducing Graphene-Metal Contact Resistance via Laser Nano-welding

The large graphene-metal contact resistance is a major limitation for development of graphene electronics. graphene behaves as an insulator for out-of-plane carrier transport to metallic contacts. Laser nano-welding was developed and led to RC reductions of up to 84%. Localized laser irradiation at the edges of graphene led to the formation of chemically active point defects. Precise structural modifications and formation of G-M bonding led to improved carrier efficiency in graphene devices

Single-crystal organometallic perovskite optical fibers

Semiconductors in their optical-fiber forms are desirable. Single-crystal organometallic halide perovskites have attractive optoelectronic properties and therefore are suitable fiber-optic platforms. However, single-crystal organometallic perovskite optical fibers have not been reported before due to the challenge of one-directional single-crystal growth in solution. Here, we report a solution-processed approach to continuously grow single-crystal organometallic perovskite optical fibers with controllable diameters and lengths. For single-crystal MAPbBr3 (MA = CH3NH3+) perovskite optical fiber made using our method, it demonstrates low transmission losses (<0.7 dB/cm), mechanical flexibilities (a bending radius down to 3.5 mm), and mechanical deformation-tunable photoluminescence in organometallic perovskites. Moreover, the light confinement provided by our organometallic perovskite optical fibers leads to three-photon absorption (3PA), in contrast with 2PA in bulk single crystals under the same experimental conditions. The single-crystal organometallic perovskite optical fibers have the potential in future optoelectronic applications

Annealing and oxidation of silicon oxide films prepared by plasma-enhanced chemical vapor deposition

We have investigated phase separation, silicon nanocrystal (Si NC) formation and optical properties of Si oxide (SiOx, 0,x,2) films by high-vacuum annealing and dry oxidation. The SiOx films were deposited by plasma-enhanced chemical vapor deposition at different nitrous–oxide/silane flow ratios. The physical and optical properties of the SiOx films were studied as a result of high-vacuum annealing and thermal oxidation. X-ray photoelectron spectroscopy (XPS) reveals that the as-deposited films have a random-bonding or continuous-random-network structure with different oxidation states. After annealing at temperatures above 1000 °C, the intermediate Si continuum in XPS spectra (referring to the suboxide) split to Si peaks corresponding to SiO2 and elemental Si. This change indicates the phase separation of the SiOx into more stable SiO2and Si clusters. Raman, high-resolution transmission electron microscopy and optical absorption confirmed the phase separation and the formation of Si NCs in the films. The size of Si NCs increases with increasing Si concentration in the films and increasing annealing temperature. Two photoluminescence (PL) bands were observed in the films after annealing. The ultraviolet (UV)-range PL with a peak fixed at 370–380 nm is independent of Si concentration and annealing temperature, which is a characteristic of defect states. Strong PL in red range shows redshifts from ~600 to 900 nm with increasing Si concentration and annealing temperature, which supports the quantum confinement model. After oxidation of the high-temperature annealed films, the UV PL was almost quenched while the red PL shows continuous blueshifts with increasing oxidation time. The different oxidation behaviors further relate the UV PL to the defect states and the red PL to the recombination of quantum-confined excitions

Stwl Modifies Chromatin Compaction and Is Required to Maintain DNA Integrity in the Presence of Perturbed DNA Replication

Hydroxyurea, a well-known DNA replication inhibitor, induces cell cycle arrest and intact checkpoint functions are required to survive DNA replication stress induced by this genotoxic agent. Perturbed DNA synthesis also results in elevated levels of DNA damage. It is unclear how organisms prevent accumulation of this type of DNA damage that coincides with hampered DNA synthesis. Here, we report the identification of stonewall ( stwl) as a novel hydroxyurea-hypersensitive mutant. We demonstrate that Stwl is required to prevent accumulation of DNA damage induced by hydroxyurea; yet, Stwl is not involved in S/M checkpoint regulation. We show that Stwl is a heterochromatin-associated protein with transcription-repressing capacities. In stwl mutants, levels of trimethylated H3K27 and H3K9 ( two hallmarks of silent chromatin) are decreased. Our data provide evidence for a Stwl-dependent epigenetic mechanism that is involved in the maintenance of the normal balance between euchromatin and heterochromatin and that is required to prevent accumulation of DNA damage in the presence of DNA replication stress.</p